Name: 4th EUV-FEL Workshop
Start: 2019-12-10T12:30:00+09:00
End: 2019-12-10T17:25:00+09:00
Location: Akihabara UDX

4th EUV-FEL Workshop

Tuesday, 10 December 2019 - 12:30

Monday, 9 December 2019 ¶
Tuesday, 10 December 2019 ¶

13:10 【Keynote】R&D on new lasers with unexplored wavelengths aiming at idustrial application/Tadatake Sato（AIST）
【Keynote】R&D on new lasers with unexplored wavelengths aiming at idustrial application/Tadatake Sato（AIST）
13:10 - 13:50
Room: NEXT1

13:50 【Keynote】Trend of Leading-Edge Semiconductors and the Patterning Technologies/Soichi Inoue（KIOXIA）
【Keynote】Trend of Leading-Edge Semiconductors and the Patterning Technologies/Soichi Inoue（KIOXIA）
13:50 - 14:30
Room: NEXT1

14:30 Break
Break
14:30 - 15:00
Room: NEXT1

15:00 Demonstration of high-repetition FEL using cERL and beyond EUV-FEL/Ryukou Kato（KEK）
Demonstration of high-repetition FEL using cERL and beyond EUV-FEL/Ryukou Kato（KEK）
15:00 - 15:30
Room: NEXT1

15:30 Study on the soft X-ray FEL light irradiation of resist materials/Kazumasa Okamoto（Osaka Univ.）
Study on the soft X-ray FEL light irradiation of resist materials/Kazumasa Okamoto（Osaka Univ.）
15:30 - 16:00
Room: NEXT1

16:00 Leading Edge Short Wavelength Light Source（DUV/EUV） for High Volume Semiconductor Manufacturing/Hakaru Mizoguchi（GIGAPHOTON INC.）
Leading Edge Short Wavelength Light Source（DUV/EUV） for High Volume Semiconductor Manufacturing/Hakaru Mizoguchi（GIGAPHOTON INC.）
16:00 - 16:30
Room: NEXT1

16:30 Cost reduction of superconducting rf accelerator and next-generation technology/Shinichiro Michizono（KEK）
Cost reduction of superconducting rf accelerator and next-generation technology/Shinichiro Michizono（KEK）
16:30 - 17:00
Room: NEXT1