10 December 2019
Akihabara UDX
Asia/Tokyo timezone

Presentation File

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13:00
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15:00
16:00
17:00
【Keynote】R&D on new lasers with unexplored wavelengths aiming at idustrial application/Tadatake Sato(AIST)
NEXT1
13:10 - 13:50
【Keynote】Trend of Leading-Edge Semiconductors and the Patterning Technologies/Soichi Inoue(KIOXIA)
NEXT1
13:50 - 14:30
Break
NEXT1, Akihabara UDX
14:30 - 15:00
Demonstration of high-repetition FEL using cERL and beyond EUV-FEL/Ryukou Kato(KEK)
NEXT1
15:00 - 15:30
Study on the soft X-ray FEL light irradiation of resist materials/Kazumasa Okamoto(Osaka Univ.)
NEXT1
15:30 - 16:00
Leading Edge Short Wavelength Light Source(DUV/EUV) for High Volume Semiconductor Manufacturing/Hakaru Mizoguchi(GIGAPHOTON INC.)
NEXT1
16:00 - 16:30
Cost reduction of superconducting rf accelerator and next-generation technology/Shinichiro Michizono(KEK)
NEXT1
16:30 - 17:00