Description
A Low Gain Avalanche Diode (LGAD) sensor is developed as a semiconductor tracking detector with precise time resolution. In the application of the LGAD detector to high energy and high intensity of hadron collider experiments, the device must have radiation tolerance to both total ionization dose (TID) and non-ionization energy loss (NIEL).
In particular, since LGAD has a p+ implantation layer as an amplification layer, there is a unique problem that radiation damage reduces the number of acceptors in the amplification layer and the amplification gain is reduced.
I will present about the improvement of radiation tolerance with newly prototyped sensors such as different oxygen and inactive boron concentration. The future plan of radiation tolerance developments is also presented.