With high-NA EUV Lithography entering its industrial R&D phase at various pilot lines this year, there are still a number of significant technical and scientific challenges to be addressed to ensure its success in manufacturing. I will describe some of these challenges, such as the tradeoffs between sensitivity, resolution and LER for patterning materials, as well as that of the mask 3D...
At OIST, we have started R&D on a highly energy-efficient two-mirror in-line projector with a simplified illumination system. The EUV source power can be reduced by 1/10 compared to the current six mirror EUV projector system. The required EUV power is 20 watts for a process speed of more than 100 wafers per hour. The proposed projector achieves 0.3 NA (13 mm field) and can be mounted in a...
Energy-Recovery Linac (ERL) based Free-Electron Laser (FEL) has been a promising solution for the high-power EUV light source for future semiconductor lithography. Considering the increasing demands of semiconductors and the roadmap for smaller nodes, realization of a higher power EUV (and BEUV) light source at high efficiency has been strongly required. At KEK, we have been designing...
In this conference, we will report about new EUV research activities in Kyushu-Univ. in Japan.
1st topic is new EUV exposure research center: named “EUV Photon Co.. This organization will support material development of material industry of EUV lithography, for example photo-resist, and photo mask and so on. We prepare EUV light source and exposure optical system and vacuum chamber system for...
