9th EUV-FEL Workshop

Tuesday Feb 4, 2025, 1:00 PM → 5:00 PM Asia/Tokyo

Royal Blue Hall (Tokyo Tech Front (Kuramae Kaikan), Institute of Science Tokyo)

Hiroshi Kawata (KEK)

In the field of cutting-edge semiconductor development, the trial operation of High-NA EUV lithography systems has begun globally. In Japan, financial support for mass production of next-generation semiconductors is expanding, and efforts are being made to foster advanced and critical technologies. From the perspective of sustainability, the demand for energy efficiency is also becoming increasingly urgent. In light of these trends, we organize the workshop and invite prominent speakers leading these fields. 

 

Dr. Bruno La Fontaine, Director of the Center for X-ray Optics (CXRO) of LBNL, will deliver a keynote lecture about the Advanced EUV Lithography in a future including the subject of what kinds of challenges are important in the optics in the case of FEL light source lithography. Additionally, we are honored to feature distinguished invited speakers, including Prof. Tsumoru Shintake from Okinawa Institute of Science and Technology, Prof. Yosuke Honda from Accelerator Laboratory KEK, and Prof. Hakaru Mizoguchi from Quantum and Photonics Technology Research Center, Kyushu University.  

 

Date and time: Tuesday, February 4, 2025, 13:00-16:25 (JST)

Workshop Site: Royal Blue Hall in Kuramae Kaikan, Institute of Science Tokyo

https://www.isct.ac.jp/en/001/about/campuses-and-offices/ookayama

Hybrid platform: Zoom

Participation capacity: ONSITE: ~100, ONLINE: 300

Participation fee: Free

 

We look forward to your participation! 

 

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Sunao Ishihara
Representative of EUV-FEL Light Source Study Group for Industrialization

Hiroshi Kawata
High Energy Accelerator Research Organization, Innovation Center for Applied Superconducting Accelerator (iCASA)
 

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This workshop is supported by funding based on "KEK Donation Programs".

Map.pdf

Poster.pdf

1 Openning Remarks

Speaker: Prof. Shinichiro Michizono (KEK, Executive Director)

2 Greeting

Speaker: Dr. Tetsuyuki Muramatsu (MEXT)

3 Target of the workshop

Speaker: Prof. Hiroshi Kawata (KEK_Secretary of the workshop)

4 [Key-note Lecture] EUV Lithography: Current Research and Perspective

Speaker: Dr. Bruno La Fontaine (Director, The Center for X-ray Optics (CXRO) , LBNL)

2:05 PM Coffee break

5 R&D Status on Two-mirror In-Line Projector for OIST EUV lithography

At OIST, we have started R&D on a highly energy-efficient two-mirror in-line projector with a simplified illumination system. The EUV source power can be reduced by 1/10 compared to the current six mirror EUV projector system. The required EUV power is 20 watts for a process speed of more than 100 wafers per hour. The proposed projector achieves 0.3 NA (13 mm field) and can be mounted in a cylindrical tube configuration similar to a DUV projector, providing superior mechanical stability, easier assembly/maintenance and low cost.
The EUV light is directed in front of the mask by two narrow cylindrical mirrors on either side of the diffraction cone, called the dual line field, which provides average normal illumination and reduces the mask 3D effect. The theoretical resolution limit is 16 nm (0.3 NA), image reduction factor x4 and object image distance (OID) 1500 mm.

Speaker: Prof. Tsumoru Shintake (OIST)

abst_Shintake.pdf

6 The Must Light Source

Energy-Recovery Linac (ERL) based Free-Electron Laser (FEL) has been a promising solution for the high-power EUV light source for future semiconductor lithography. Considering the increasing demands of semiconductors and the roadmap for smaller nodes, realization of a higher power EUV (and BEUV) light source at high efficiency has been strongly required. At KEK, we have been designing ERL-EUV-FEL based on our experience of construction and operation of a test ERL accelerator. We will present the design of the accelerator system and its expected performance from the basic principle. It will explain the technical key items in the accelerator development planned in next 5 years.

Speaker: Prof. Yosuke Honda (Accelerator Laboratory, KEK)

abst_Honda.pdf

3:25 PM Coffee break

7 Development of EUV / DUV Source for Semiconductor Manufacturing and its Application

In this conference, we will report about new EUV research activities in Kyushu-Univ. in Japan.
1st topic is new EUV exposure research center: named “EUV Photon Co.. This organization will support material development of material industry of EUV lithography, for example photo-resist, and photo mask and so on. We prepare EUV light source and exposure optical system and vacuum chamber system for this exposure. In this presentation we will report latest preparation of this organization.
2nd topic is new high power EUV source research program which has been preparing in Kyushu-University. Since 2003 we corroborate EUV source research with Gigaphoton. We are pioneer of com-bination of pulsed CO2 laser and Sn droplets, dual wavelength pico second laser pulses for shooting and debris mitigation by magnetic field have been applied We have demonstrated high average power >300W EUV power with CO2 laser more than 27kW at output power in cooperation with Gigaphoton and Mitsubishi Electric up to now 2). Also we are thinking about the Sn plasma dynamics which dom-inate the EUV emission by using Thomson Scattering (TS) measurement. Last year our group an-nounced possibility of 10% conversion efficiency with simulation and experiment (fig.3)3）.These re-sults mention that there is still sufficient potential to increase EUV output power and conversion effi-ciency in near future
At the conference, we will report latest update of above two topics.

Speaker: Prof. Hakaru Mizoguchi (QPTRC, Kyushu University)

abst_Mizoguchi.pdf

8 Closing address

Speaker: Prof. Sunao Ishihara (Representative of EUV-FEL Light Source Study Group for Industrialization)

9 Photo-session

Speaker: - -